JPH0479002B2 - - Google Patents
Info
- Publication number
- JPH0479002B2 JPH0479002B2 JP58137949A JP13794983A JPH0479002B2 JP H0479002 B2 JPH0479002 B2 JP H0479002B2 JP 58137949 A JP58137949 A JP 58137949A JP 13794983 A JP13794983 A JP 13794983A JP H0479002 B2 JPH0479002 B2 JP H0479002B2
- Authority
- JP
- Japan
- Prior art keywords
- source
- gate
- transistor
- voltage
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is DC
- G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
- G05F3/247—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Control Of Electrical Variables (AREA)
- Amplifiers (AREA)
- Logic Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US437609 | 1982-10-29 | ||
US06/437,609 US4446383A (en) | 1982-10-29 | 1982-10-29 | Reference voltage generating circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5983220A JPS5983220A (ja) | 1984-05-14 |
JPH0479002B2 true JPH0479002B2 (en]) | 1992-12-14 |
Family
ID=23737141
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58137949A Granted JPS5983220A (ja) | 1982-10-29 | 1983-07-29 | 基準電圧発生回路 |
Country Status (4)
Country | Link |
---|---|
US (1) | US4446383A (en]) |
EP (1) | EP0112443B1 (en]) |
JP (1) | JPS5983220A (en]) |
DE (1) | DE3369583D1 (en]) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3138558A1 (de) * | 1981-09-28 | 1983-04-07 | Siemens AG, 1000 Berlin und 8000 München | Schaltungsanordnung zur erzeugung eines von schwankungen einer versorgungsgleichspannung freien gleichspannungspegels |
US4553047A (en) * | 1983-01-06 | 1985-11-12 | International Business Machines Corporation | Regulator for substrate voltage generator |
IT1179823B (it) * | 1984-11-22 | 1987-09-16 | Cselt Centro Studi Lab Telecom | Generatore di tensione differenziale di rifferimento per circuiti integrati ad alimentazione singola in tecnologia nmos |
IT1204375B (it) * | 1986-06-03 | 1989-03-01 | Sgs Microelettronica Spa | Generatore di polarizzazione di sorgenti per transistori naturali in circuiti integrati digitali in tecnologia mos |
JPH0679263B2 (ja) * | 1987-05-15 | 1994-10-05 | 株式会社東芝 | 基準電位発生回路 |
US4918334A (en) * | 1988-08-15 | 1990-04-17 | International Business Machines Corporation | Bias voltage generator for static CMOS circuits |
JP2804162B2 (ja) * | 1989-09-08 | 1998-09-24 | 株式会社日立製作所 | 定電流定電圧回路 |
JPH03225402A (ja) * | 1990-01-31 | 1991-10-04 | Fujitsu Ltd | 定電圧発生回路 |
JP2614943B2 (ja) * | 1991-01-25 | 1997-05-28 | 日本電気アイシーマイコンシステム株式会社 | 定電圧発生回路 |
US5221864A (en) * | 1991-12-17 | 1993-06-22 | International Business Machines Corporation | Stable voltage reference circuit with high Vt devices |
KR950010284B1 (ko) * | 1992-03-18 | 1995-09-12 | 삼성전자주식회사 | 기준전압 발생회로 |
US6084433A (en) * | 1998-04-03 | 2000-07-04 | Adaptec, Inc. | Integrated circuit SCSI input receiver having precision high speed input buffer with hysteresis |
US6285256B1 (en) | 2000-04-20 | 2001-09-04 | Pericom Semiconductor Corp. | Low-power CMOS voltage follower using dual differential amplifiers driving high-current constant-voltage push-pull output buffer |
US8148962B2 (en) * | 2009-05-12 | 2012-04-03 | Sandisk Il Ltd. | Transient load voltage regulator |
JP5959220B2 (ja) * | 2012-02-13 | 2016-08-02 | エスアイアイ・セミコンダクタ株式会社 | 基準電圧発生装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3806742A (en) * | 1972-11-01 | 1974-04-23 | Motorola Inc | Mos voltage reference circuit |
US3970875A (en) * | 1974-11-21 | 1976-07-20 | International Business Machines Corporation | LSI chip compensator for process parameter variations |
US4016434A (en) * | 1975-09-04 | 1977-04-05 | International Business Machines Corporation | Load gate compensator circuit |
JPS5849885B2 (ja) * | 1976-03-16 | 1983-11-07 | 日本電気株式会社 | 定電圧回路 |
US4158804A (en) * | 1977-08-10 | 1979-06-19 | General Electric Company | MOSFET Reference voltage circuit |
US4300061A (en) * | 1979-03-15 | 1981-11-10 | National Semiconductor Corporation | CMOS Voltage regulator circuit |
-
1982
- 1982-10-29 US US06/437,609 patent/US4446383A/en not_active Expired - Lifetime
-
1983
- 1983-07-29 JP JP58137949A patent/JPS5983220A/ja active Granted
- 1983-09-23 DE DE8383109478T patent/DE3369583D1/de not_active Expired
- 1983-09-23 EP EP83109478A patent/EP0112443B1/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE3369583D1 (en) | 1987-03-05 |
EP0112443A1 (en) | 1984-07-04 |
JPS5983220A (ja) | 1984-05-14 |
US4446383A (en) | 1984-05-01 |
EP0112443B1 (en) | 1987-01-28 |
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