JPH0479002B2 - - Google Patents

Info

Publication number
JPH0479002B2
JPH0479002B2 JP58137949A JP13794983A JPH0479002B2 JP H0479002 B2 JPH0479002 B2 JP H0479002B2 JP 58137949 A JP58137949 A JP 58137949A JP 13794983 A JP13794983 A JP 13794983A JP H0479002 B2 JPH0479002 B2 JP H0479002B2
Authority
JP
Japan
Prior art keywords
source
gate
transistor
voltage
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58137949A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5983220A (ja
Inventor
Patoritsuku Konkyanon Maikeru
Karorii Eruderii Chaaruzu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS5983220A publication Critical patent/JPS5983220A/ja
Publication of JPH0479002B2 publication Critical patent/JPH0479002B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is DC
    • G05F3/10Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/247Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Amplifiers (AREA)
  • Logic Circuits (AREA)
JP58137949A 1982-10-29 1983-07-29 基準電圧発生回路 Granted JPS5983220A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US437609 1982-10-29
US06/437,609 US4446383A (en) 1982-10-29 1982-10-29 Reference voltage generating circuit

Publications (2)

Publication Number Publication Date
JPS5983220A JPS5983220A (ja) 1984-05-14
JPH0479002B2 true JPH0479002B2 (en]) 1992-12-14

Family

ID=23737141

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58137949A Granted JPS5983220A (ja) 1982-10-29 1983-07-29 基準電圧発生回路

Country Status (4)

Country Link
US (1) US4446383A (en])
EP (1) EP0112443B1 (en])
JP (1) JPS5983220A (en])
DE (1) DE3369583D1 (en])

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3138558A1 (de) * 1981-09-28 1983-04-07 Siemens AG, 1000 Berlin und 8000 München Schaltungsanordnung zur erzeugung eines von schwankungen einer versorgungsgleichspannung freien gleichspannungspegels
US4553047A (en) * 1983-01-06 1985-11-12 International Business Machines Corporation Regulator for substrate voltage generator
IT1179823B (it) * 1984-11-22 1987-09-16 Cselt Centro Studi Lab Telecom Generatore di tensione differenziale di rifferimento per circuiti integrati ad alimentazione singola in tecnologia nmos
IT1204375B (it) * 1986-06-03 1989-03-01 Sgs Microelettronica Spa Generatore di polarizzazione di sorgenti per transistori naturali in circuiti integrati digitali in tecnologia mos
JPH0679263B2 (ja) * 1987-05-15 1994-10-05 株式会社東芝 基準電位発生回路
US4918334A (en) * 1988-08-15 1990-04-17 International Business Machines Corporation Bias voltage generator for static CMOS circuits
JP2804162B2 (ja) * 1989-09-08 1998-09-24 株式会社日立製作所 定電流定電圧回路
JPH03225402A (ja) * 1990-01-31 1991-10-04 Fujitsu Ltd 定電圧発生回路
JP2614943B2 (ja) * 1991-01-25 1997-05-28 日本電気アイシーマイコンシステム株式会社 定電圧発生回路
US5221864A (en) * 1991-12-17 1993-06-22 International Business Machines Corporation Stable voltage reference circuit with high Vt devices
KR950010284B1 (ko) * 1992-03-18 1995-09-12 삼성전자주식회사 기준전압 발생회로
US6084433A (en) * 1998-04-03 2000-07-04 Adaptec, Inc. Integrated circuit SCSI input receiver having precision high speed input buffer with hysteresis
US6285256B1 (en) 2000-04-20 2001-09-04 Pericom Semiconductor Corp. Low-power CMOS voltage follower using dual differential amplifiers driving high-current constant-voltage push-pull output buffer
US8148962B2 (en) * 2009-05-12 2012-04-03 Sandisk Il Ltd. Transient load voltage regulator
JP5959220B2 (ja) * 2012-02-13 2016-08-02 エスアイアイ・セミコンダクタ株式会社 基準電圧発生装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3806742A (en) * 1972-11-01 1974-04-23 Motorola Inc Mos voltage reference circuit
US3970875A (en) * 1974-11-21 1976-07-20 International Business Machines Corporation LSI chip compensator for process parameter variations
US4016434A (en) * 1975-09-04 1977-04-05 International Business Machines Corporation Load gate compensator circuit
JPS5849885B2 (ja) * 1976-03-16 1983-11-07 日本電気株式会社 定電圧回路
US4158804A (en) * 1977-08-10 1979-06-19 General Electric Company MOSFET Reference voltage circuit
US4300061A (en) * 1979-03-15 1981-11-10 National Semiconductor Corporation CMOS Voltage regulator circuit

Also Published As

Publication number Publication date
DE3369583D1 (en) 1987-03-05
EP0112443A1 (en) 1984-07-04
JPS5983220A (ja) 1984-05-14
US4446383A (en) 1984-05-01
EP0112443B1 (en) 1987-01-28

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